Daaqadda Sapphire
Daaqadda Sapphire waxay xajistaa awooddeeda sare ee heerkulka sare, waxay leedahay sifooyin kulayl wanaagsan iyo daahfurnaan aad u wanaagsan.Waxay kiimiko ahaan u adkaysataa asiidhyada caadiga ah iyo alkali heerkulka ilaa 1000 °C iyo sidoo kale HF ka hooseeya 300 °C.Guryahaani waxay dhiirigelinayaan isticmaalkeeda ballaaran ee jawi colaadeed halkaasoo gudbinta indhaha ee u dhexeysa vacuum ultraviolet ilaa infrared dhow loo baahan yahay.
Mawjada dhererka ee SYCCO daaqadaha guud ee substrate (aan daahan lahayn)

Sifada | Guud ahaan | Saxnaanta Sare |
Dulqaadka Cabirka: | +0.0/-0.2mm | +0.0/-0.02mm |
Dulqaadashada Dhumucda: | ±0.2mm | , ± 0.005 |
Tayada dusha sare: | 60/40 | 10/5 |
Nadiifi Aperture: | >90% | >95% |
Fiican: | λ/2 | λ/10 |
Is barbar dhig: | <3 daq. | <3 ilbiriqsi |
Dahaarka AR: | Dahaar la'aan, AR, HR, PR, iwm. | Dahaar la'aan, AR, HR, PR, iwm. |
Cabirka | Ku xiran tahaycodsigaaga |
| B270 | CaF2 | Ge | MgF2 | N-BK7 | Sapphire | Si | UV Fused Silica | ZnSe | ZnS |
Tusmada dib u soo celintand) | 1.523 | 1.434 | 4.003 | 1.413 | 1.517 | 1.768 | 3.422 | 1.458 | 2.403 | 2.631 |
Isku-dhafka fidinta (Vd) | 58.5 | 95.1 | N/A | 106.2 | 64.2 | 72.2 | N/A | 67.7 | N/A | N/A |
Cufnaanta (g/cm3) | 2.55 | 3.18 | 5.33 | 3.18 | 2.46 | 3.97 | 2.33 | 2.20 | 5.27 | 5.27 |
TCE (μm/m℃) | 8.2 | 18.85 | 6.1 | 13.7 | 7.1 | 5.3 | 2.55 | 0.55 | 7.1 | 7.6 |
Heerkulka Jilicsan(℃) | 533 | 800 | 936 | 1255 | 557 | 2000 | 1500 | 1000 | 250 | 1525 |
Garaac adkaanta (kg/mm2) | 542 | 158.3 | 780 | 415 | 610 | 2200 | 1150 | 500 | 120 | 120 |
a: Cabbirka cabbirka: 0.2-500mm, dhumucdiisuna> 0.1mm
b: Waxyaabo badan ayaa la dooran karaa, oo ay ku jiraan walxaha IR sida Ge, Si, Znse, fluoride iyo wixii la mid ah
c: dahaarka AR ama sida codsigaaga
d: Qaabka alaabta: wareegsan, leydi ama qaab gaar ah
